page 1 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com pma2-162ln-d+ 50 ? 0.7 to 1.6 ghz ultra low noise, high ip3 the big deal ? ultra low noise figure, 0.5 db ? high gain, high ip3 ? adjustable gain product overview mini-circuits pma2-162ln-d+ is a e-phemt based ultra-low noise mmic amplifer die with a unique combinations of low noise and high ip3 making this amplifer ideal for sensitive high dynamic range receiver applications. this design operates on a single 4v supply. feature advantages ultra low noise, 0.5 db at 1.0 ghz outstanding world class noise fgure performance. high ip3, +30 dbm at 1.0 ghz combining low noise and high ip3 makes this mmic amplifer ideal for use in low noise receiver front end (rfe) as it gives the user advantages at both ends of the dynamic range: sensitivity & two-tone im performance. adjustable gain by changing feedback resistor r1, gain can be changed from 19.7 to 23.5 db at 1ghz max input power, +25 dbm ruggedized design operates up to high input powers often seen at receiver inputs eliminating the need for an external resistor. high reliability low, small signal operating current of 55 ma nominal maintains junction temperatures typically below 100c at 85c ground lead temperature. unpackage die enables direct integration into customer hybrids. key features monolithic amplifer die
page 2 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com pma2-162ln-d+ 50 ? 0.7 to 1.6 ghz product features ? low noise fgure, 0.5 at 1 ghz ? high ip3, 30 dbm typ. at 1 ghz ? adjustable gain, 19.7-23.5 db typ. at 1 ghz ? high pout, p1db 20 dbm typ. at 1 ghz rev. or m164513 pma2-162ln-d+ wp/rs/cp 171229 general description pma2-162ln-d+ (rohs compliant) is an amplifer die fabricated using e-phemt technology and offers extremely high dynamic range with ultra low noise fgure and good input and output return loss. typical applications ? base station infrastructure ? portable wireless ? lte ? gps ? gsm ? airborne radar ultra low noise, high ip3 ordering information: refer to last page simplifed schematic and pad description bonding pad position note: 1. bond pad material - gold 2. bottom of die - gold plated dimensions in m, typical l1 l2 l3 l4 l5 l6 l7 h1 h2 h3 h4 h5 thickness die size bond pad #1 size bond pad size #2 to #6 159 378 380 631 639 736 890 98 174 190 595 770 100 890 x 770 140 x 65 65 x 65 1 ground rf ground 3 2 4 bias rf-in rf-out and dc-in feedback 5 6 pad# function description 2 rf-in connects to rf input via c1 and pad 3 via l1 6 rf-out & dc-in connects to rf out via c2, pad 5 via r1, and c3 3 rf- ground connects to ground via c4 and pad 2 via l1 4 bias connects to supply voltage (vs) via rbias 5 feedback connected to pads 6, 4 via r1 and c3 1 ground connects to ground die bottom ground connects to ground monolithic amplifer die +rohs compliant the +suffix identifies rohs compliance. see our web site for rohs compliance methodologies and qualifications 0 l1 h5 h4 l3 l4 h3 h2 0 h1 l7 l2 l5 l6 6 5 3 1 2 4 1 2 3 4 5 6
page 3 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com pma2-162ln-d+ electrical specifcations 1,2 at 25c and 4v, unless noted parameter condition (ghz) r1=267 ? 1 r1=93 ? 2 units min. typ. max. min. typ. max. frequency range 0.7 1.6 0.7 1.6 ghz 1. measured on mini-circuits characterization test board. die package in 2x2 mm, 8-lead mclp package and soldered on tb-615+.see characterization test circuit (fig. 1) r1=267 ? 2. measured on mini-circuits characterization test board. see characterization test circuit (fig. 1) r1=93 ? 3. current increases at p1db 4. (current at 85c - current at -45c)/130 noise figure 0.7 0.55 0.57 db 0.8 0.51 0.54 1.0 0.47 0.48 1.3 0.64 0.65 1.6 0.80 0.81 gain 0.7 24.4 22.7 db 0.8 24.1 22.2 1.0 22.7 20.8 1.3 20.7 19.1 1.6 18.8 17.7 input return loss 0.7 9.5 11.5 db 0.8 15.5 18.8 1.0 17.9 20.0 1.3 12.4 14.5 1.6 10.8 12.4 output return loss 0.7 13.6 21.6 db 0.8 16.1 17.8 1.0 18.9 16.0 1.3 15.6 15.1 1.6 10.7 11.6 output power @1 db compression 3 0.7 19.5 18.3 dbm 0.8 19.8 18.9 1.0 19.9 19.7 1.3 19.7 19.8 1.6 18.8 19.0 output ip3 0.7 29.1 28.3 dbm 0.8 30.3 29.5 1.0 30.0 29.0 1.3 30.1 29.2 1.6 29.4 28.5 device operating voltage 3.8 4.0 4.2 3.8 4.0 4.2 v device operating current at 4v 55 60 55 60 ma device current variation vs. temperature at 4v 4 2 2 a/c device current variation vs voltage at 25c 0.016 0.016 ma/mv thermal resistance, junction-to-ground lead 53 53 c/w parameter ratings operating temperature (ground lead) -40c to 85c junction temperature 150c total power dissipation 0.55 w input power (cw), vd=4v 25 dbm dc voltage 5.5v note: permanent damage may occur if any of these limits are exceeded. electrical maximum ratings are not intended for continuous normal operation. absolute maximum ratings monolithic e-phemt mmic amplifer die
page 4 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com pma2-162ln-d+ fig 1 . application and characterization circuit note: this block diagram is used for characterization. gain, return loss, output power at 1db compression (p1 db) , output ip3 (oip3) and noise fgure measured using agilents n5242a pna-x microwave network analyzer. conditions: 1. (dut packaged in 2x2mm, 8-lead mclp package and soldered on mini-circuits characterization test board tb-615+) 2. gain and return loss: pin= -25dbm 3. output ip3 (oip3): two tones, spaced 1 mhz apart, 0 dbm/tone at output. recommended application and characterization test circuit adjustable gain performance (vs. r1) 1 s21 (amplitude,db) vs. freqency and r1 values 15 17 19 21 23 25 27 700 900 1100 1300 1500 rf(mhz) s21 (amplitude) (db) r1=57.6_ohm r1=93.1_ohm r1=267_ohm r1=562_ohm rbias 1 tb-615+ 6 3 2 4 5 s22 (amplitude,db) vs. freqency and r1 values -35 -30 -25 -20 -15 -10 -5 0 700 900 1100 1300 1500 rf(mhz) s22 (amplitude) (db) r1=57.6_ohm r1=93.1_ohm r1=267_ohm r1=562_ohm s11 (amplitude,db) vs. freqency and r1 values -35 -30 -25 -20 -15 -10 -5 0 700 900 1100 1300 1500 rf(mhz) s11 (amplitude) (db) r1=57.6_ohm r1=93.1_ohm r1=267_ohm r1=562_ohm noise figure (db) vs. freqency and r1 values 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 700 900 1100 1300 1500 rf(mhz) noise figure (db) r1=57.6_ohm r1=93.1_ohm r1=267_ohm r1=562_ohm monolithic e-phemt mmic amplifer die
page 5 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com pma2-162ln-d+ assembly diagram assembly and handling procedure 1. storage dice should be stored in a dry nitrogen purged desiccators or equivalent. 2. esd mmic e-phemt amplifer dice are susceptible to electrostatic and mechanical damage. die are supplied in antistatic protected material, which should be opened in clean room conditions at an appropriately grounded anti-static worksta tion. devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter esd damage to dice. 3. die attach the die mounting surface must be clean and fat. using conductive silver flled epoxy, recommended epoxies are diemat dm6030hk-pt/h579 or ablestik 84-1lmisr4. apply suffcient epoxy to meet required epoxy bond line thickness, epoxy fllet height and epoxy coverage around total die periphery. parts shall be cured in a nitrogen flled atmosphere per manufacturers cure condition. it is recommended to use antistatic die pick up tools only. 4. wire bonding bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond pads. thermosonic bonding is used with minimized ultrasonic content. bond force, time, ultrasonic power and temperature are all critical parameters. suggested wire is pure gold, 1 mil diameter. bonds must be made from the bond pads on the die to the package or substrate. all bond wires should be kept as short as low as reasonable to minimize performance degradation due to undesirable series inductance. monolithic e-phemt mmic amplifer die rf - in rf - o ut and dc - in ground feedback rf - ground bias
page 6 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com pma2-162ln-d+ performance data data table swept graphs s-parameter (s2p files) data set with and without port extension (.zip fle) case style die die ordering and packaging information quantity, package model no. small, gel - pak: 5,10,50,100 kgd* medium ? , partial wafer: kgd*<850 large ? , full wafer pma2-162ln-dg+ pma2-162ln-dp+ PMA2-162LN-DF+ ? refer to an-60-067 environmental ratings env80 additional notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp d. mini-circuits does not warrant the accuracy or completeness of the information, text, graphics and other items contained within this document and same are provided as an accommodation and on an as is basis, with all faults. e. purchasers of this part are solely responsible for proper storing, handling, assembly and processing of known good dice (including, without limitation, proper esd preventative measures, die preparation, die attach, wire bond ing and related assembly and test activities), and mini-circuits assumes no responsibility therefor or for environmental effects on known good dice. f. mini-circuits and the mini-circuits logo are registered trademarks of scientifc components corporation d/b/a mini- circuits. all other third-party trademarks are the property of their respective owners. a reference to any third-party trademark does not constitute or imply any endorsement, affliation, sponsorship, or recommendation by any such third-party of mini-circuits or its products. esd rating** human body model (hbm): class 1b (pass 500v) in accordance with ansi/esd stm 5.1 - 2001 additional detailed technical information additional information is available on our dash board. *known good dice (kgd) means that the dice in question have been subjected to mini-circuits dc test performance criteria and measurement instructions and that the parametric data of such dice fall within a predefned range. while dc testing is not defnitive, it does help to provide a higher degree of confdence that dice are capable of meeting typical rf electrical parameters specifed by mini-circuits. ** tested in industry standard mclp 2 x 2 mm, 8-lead package. monolithic e-phemt mmic amplifer die
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